HUASHUO-Single FETs, MOSFETs-HSP0139

Description

Drain to Source Voltage;100V/Gate Charge(Qg);92nC@10V/Number;1 P-Channel/Pd - Power Dissipation;104W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6.516nF


P-Channel 100V 35A 104W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);92nC@10V/Number;1 P-Channel/Pd - Power Dissipation;104W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);92nC@10V/Number;1 P-Channel/Pd - Power Dissipation;104W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6.516nF


    P-Channel 100V 35A 104W Through Hole TO-220

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