HUASHUO-Single FETs, MOSFETs-HSP100P06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;5.2nF


P-Channel 60V 100A 210W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;5.2nFP-Channel 60V 100A... Read more

$3.00 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;5.2nF


    P-Channel 60V 100A 210W Through Hole TO-220

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account