HUASHUO-Single FETs, MOSFETs-HSP100P06
- HUASHUO
Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);100A/Ciss-Input Capacitance;5.2nFP-Channel 60V 100A... Read more
$3.00 Excl. VAT
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