HUASHUO-Single FETs, MOSFETs-HSP110P04

Description

Drain to Source Voltage;40V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.09nF


P-Channel 40V 110A 200W Through Hole TO-220

Product form

Drain to Source Voltage;40V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.09nFP-Channel... Read more

$1.74 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);722pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.09nF


    P-Channel 40V 110A 200W Through Hole TO-220

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