HUASHUO-Single FETs, MOSFETs-HSP16N25

Description

Drain to Source Voltage;250V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.289nF/Output Capacitance(Coss);149pF


250V 220mΩ@10V 1 N-channel 120W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$1.74 Excl. VAT

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);47pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.289nF/Output Capacitance(Coss);149pF


    250V 220mΩ@10V 1 N-channel 120W TO-220 Single FETs, MOSFETs RoHS

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