HUASHUO-Single FETs, MOSFETs-HSP18N20

Description

Drain to Source Voltage;200V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.047nF


N-Channel 200V 18A 83W Through Hole TO-220

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);45nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.047nF


    N-Channel 200V 18A 83W Through Hole TO-220

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