HUASHUO-Single FETs, MOSFETs-HSP30N15A

Description

Drain to Source Voltage;150V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;81W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.19nF


N-Channel 150V 30A 81W Through Hole TO-220

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;81W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;81W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.19nF


    N-Channel 150V 30A 81W Through Hole TO-220

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