HUASHUO-Single FETs, MOSFETs-HSP5N25

Description

Drain to Source Voltage;250V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);970mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;670pF/Output Capacitance(Coss);14pF


N-Channel 250V 5A 38W Through Hole TO-220

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);970mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$4.68 Excl. VAT

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);12.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;38W/RDS(on);970mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;670pF/Output Capacitance(Coss);14pF


    N-Channel 250V 5A 38W Through Hole TO-220

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