HUASHUO-Single FETs, MOSFETs-HSP6040

Description

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;166W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);245pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.706nF/Output Capacitance(Coss);325pF


N-Channel 60V 140A 166W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;166W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);245pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$1.86 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;166W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);245pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.706nF/Output Capacitance(Coss);325pF


    N-Channel 60V 140A 166W Through Hole TO-220

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