HUASHUO-Single FETs, MOSFETs-HSP60N06

Description

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);106pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.84nF


N-Channel 60V 60A 85W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);106pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);106pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.84nF


    N-Channel 60V 60A 85W Through Hole TO-220

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