HUASHUO-Single FETs, MOSFETs-HSP6117

Description

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Ciss-Input Capacitance;4.635nF


P-Channel 60V 80A 200W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Ciss-Input Capacitance;4.635nFP-Channel 60V 80A... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);85nC@10V/Number;1 P-Channel/Pd - Power Dissipation;200W/RDS(on);14mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);241pF/Current - Continuous Drain(Id);80A/Ciss-Input Capacitance;4.635nF


    P-Channel 60V 80A 200W Through Hole TO-220

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