HUASHUO-Single FETs, MOSFETs-HSP80N20
- HUASHUO
Drain to Source Voltage;200V/Gate Charge(Qg);115nC@10V/Number;1 N-channel/Pd - Power Dissipation;370W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$3.06 Excl. VAT
-
Guaranteed secure & safe checkout.