HUASHUO-Single FETs, MOSFETs-HSP80N20

Description

Drain to Source Voltage;200V/Gate Charge(Qg);115nC@10V/Number;1 N-channel/Pd - Power Dissipation;370W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.49nF


N-Channel 200V 80A 370W Through Hole TO-220

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);115nC@10V/Number;1 N-channel/Pd - Power Dissipation;370W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);115nC@10V/Number;1 N-channel/Pd - Power Dissipation;370W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.49nF


    N-Channel 200V 80A 370W Through Hole TO-220

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