HUASHUO-Single FETs, MOSFETs-HSP80P10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);180nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);99pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;11.66nF/Output Capacitance(Coss);289pF


P-Channel 100V 80A 210W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);180nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);99pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$3.39 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);180nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);99pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;11.66nF/Output Capacitance(Coss);289pF


    P-Channel 100V 80A 210W Through Hole TO-220

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