HUASHUO-Single FETs, MOSFETs-HSP8119

Description

Drain to Source Voltage;80V/Gate Charge(Qg);190nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;13.3nF


P-Channel 80V 90A 210W Through Hole TO-220

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);190nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);190nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;210W/RDS(on);17mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;13.3nF


    P-Channel 80V 90A 210W Through Hole TO-220

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