HUASHUO-Single FETs, MOSFETs-HSS0008

Description

Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1V


N-Channel 100V 1.2A 1W Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1VN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);310mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16.4pF/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1V


    N-Channel 100V 1.2A 1W Surface Mount SOT-23

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