HUASHUO-Single FETs, MOSFETs-HSS1N20

Description

Drain to Source Voltage;200V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;710mW/RDS(on);1.9Ω@10V/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;145pF


N-Channel 200V 1A 710mW Surface Mount SOT-23L

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;710mW/RDS(on);1.9Ω@10V/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;145pFN-Channel 200V... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;710mW/RDS(on);1.9Ω@10V/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;145pF


    N-Channel 200V 1A 710mW Surface Mount SOT-23L

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