HUASHUO-Single FETs, MOSFETs-HSS2309A

Description

Drain to Source Voltage;60V/Gate Charge(Qg);8.6nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;720mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;511pF/Output Capacitance(Coss);29pF


60V 150mΩ@10V 1 P-Channel 720mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);8.6nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;720mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$1.35 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);8.6nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;720mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;511pF/Output Capacitance(Coss);29pF


    60V 150mΩ@10V 1 P-Channel 720mW SOT-23 Single FETs, MOSFETs RoHS

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