HUASHUO-Single FETs, MOSFETs-HSS3407

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.4W/RDS(on);85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;583pF


P-Channel 30V 4.1A 1.4W Surface Mount SOT-23L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.4W/RDS(on);85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.4nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.4W/RDS(on);85mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;583pF


    P-Channel 30V 4.1A 1.4W Surface Mount SOT-23L

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