HUASHUO-Single FETs, MOSFETs-HSS5N04A

Description

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;720mW/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;445pF/Output Capacitance(Coss);60pF


40V 30mΩ@10V 1 N-channel 720mW SOT-23S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;720mW/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);10nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;720mW/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;445pF/Output Capacitance(Coss);60pF


    40V 30mΩ@10V 1 N-channel 720mW SOT-23S Single FETs, MOSFETs RoHS

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