HUASHUO-Single FETs, MOSFETs-HSS6107

Description

Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);180mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;531pF


P-Channel 60V 1.7A 1W Surface Mount SOT-23L

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Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);180mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);180mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;531pF


    P-Channel 60V 1.7A 1W Surface Mount SOT-23L

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