HUASHUO-Single FETs, MOSFETs-HSSK6303

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.64nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;50pF


N-Channel Array 20V 0.5A 0.3W Surface Mount SOT-363

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Drain to Source Voltage;20V/Gate Charge(Qg);1.64nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.64nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;300mW/RDS(on);450mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;50pF


    N-Channel Array 20V 0.5A 0.3W Surface Mount SOT-363

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