HUASHUO-Single FETs, MOSFETs-HSSN2301

Description

Drain to Source Voltage;20V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;350mW/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;577pF/Output Capacitance(Coss);52pF


20V 65mΩ@4.5V 1 P-Channel 350mW SOT-323 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;350mW/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;350mW/RDS(on);65mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;577pF/Output Capacitance(Coss);52pF


    20V 65mΩ@4.5V 1 P-Channel 350mW SOT-323 Single FETs, MOSFETs RoHS

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