HUASHUO-Single FETs, MOSFETs-HSSN3134

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;92pF/Output Capacitance(Coss);25pF


N-Channel 20V 1A 350mW Surface Mount SOT-323

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);200mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);1A/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;92pF/Output Capacitance(Coss);25pF


    N-Channel 20V 1A 350mW Surface Mount SOT-323

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