HUASHUO-Single FETs, MOSFETs-HSST3018

Description

Drain to Source Voltage;30V/Gate Charge(Qg);2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;250mW/RDS(on);600mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;31pF


N-Channel 30V 0.5A 0.25W Surface Mount SOT-523

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;250mW/RDS(on);600mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);2nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;250mW/RDS(on);600mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;31pF


    N-Channel 30V 0.5A 0.25W Surface Mount SOT-523

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