HUASHUO-Single FETs, MOSFETs-HST011N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);141nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;312W/RDS(on);1.05mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);370A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;10.043nF/Output Capacitance(Coss);4.487nF


100V 1.05mΩ@10V 1 N-channel 312W TOLT-16 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);141nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;312W/RDS(on);1.05mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);370A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);141nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;312W/RDS(on);1.05mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);370A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;10.043nF/Output Capacitance(Coss);4.487nF


    100V 1.05mΩ@10V 1 N-channel 312W TOLT-16 Single FETs, MOSFETs RoHS

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