HUASHUO-Single FETs, MOSFETs-HST011N10
- HUASHUO
Drain to Source Voltage;100V/Gate Charge(Qg);141nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;312W/RDS(on);1.05mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);370A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$5.76 Excl. VAT
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