HUASHUO-Single FETs, MOSFETs-HSU0117

Description

Drain to Source Voltage;100V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);148pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;8.476nF/Output Capacitance(Coss);155pF


100V 40mΩ@10V 1 P-Channel 60W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);148pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);150nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);148pF/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;8.476nF/Output Capacitance(Coss);155pF


    100V 40mΩ@10V 1 P-Channel 60W TO-252 Single FETs, MOSFETs RoHS

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