HUASHUO-Single FETs, MOSFETs-HSU1241

Description

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);16.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.013nF


N-Channel 40V 40A 31.3W Surface Mount TO-252-2

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);16.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);10nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);16.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.013nF


    N-Channel 40V 40A 31.3W Surface Mount TO-252-2

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