HUASHUO-Single FETs, MOSFETs-HSU12P10

Description

Drain to Source Voltage;100V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);270mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2V


P-Channel 100V 12A 35W Surface Mount TO-252-2

Product form

Drain to Source Voltage;100V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);270mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2VP-Channel 100V... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);270mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1.2V


    P-Channel 100V 12A 35W Surface Mount TO-252-2

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