HUASHUO-Single FETs, MOSFETs-HSU3031

Description

Drain to Source Voltage;30V/Gate Charge(Qg);60nC@10V/Number;1 P-Channel/Pd - Power Dissipation;90W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.45nF


P-Channel 30V 70A 90W Surface Mount TO-252-2

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);60nC@10V/Number;1 P-Channel/Pd - Power Dissipation;90W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);60nC@10V/Number;1 P-Channel/Pd - Power Dissipation;90W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;3.45nF


    P-Channel 30V 70A 90W Surface Mount TO-252-2

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