HUASHUO-Single FETs, MOSFETs-HSU30N02

Description

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.2nF


N-Channel 20V 30A 40W Surface Mount TO-252-2

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.29 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);94pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.2nF


    N-Channel 20V 30A 40W Surface Mount TO-252-2

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