HUASHUO-Single FETs, MOSFETs-HSU30P15

Description

Drain to Source Voltage;150V/Gate Charge(Qg);120nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);116pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.65V/Ciss-Input Capacitance;8.6nF/Output Capacitance(Coss);155pF


P-Channel 150V 30A 57W Surface Mount TO-252-2L

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);120nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);116pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.65V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);120nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;57W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);116pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.65V/Ciss-Input Capacitance;8.6nF/Output Capacitance(Coss);155pF


    P-Channel 150V 30A 57W Surface Mount TO-252-2L

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