HUASHUO-Single FETs, MOSFETs-HSU4103

Description

Drain to Source Voltage;40V/Gate Charge(Qg);11.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.415nF


P-Channel 40V 27A 35W Surface Mount TO-252-2

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);11.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$3.57 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);11.5nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;35W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.415nF


    P-Channel 40V 27A 35W Surface Mount TO-252-2

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