HUASHUO-Single FETs, MOSFETs-HSU4113

Description

Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;31.3W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.004nF


P-Channel 40V 23A 31.3W Surface Mount TO-252-2

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;31.3W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;31.3W/RDS(on);40mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.004nF


    P-Channel 40V 23A 31.3W Surface Mount TO-252-2

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