HUASHUO-Single FETs, MOSFETs-HSU6004

Description

Drain to Source Voltage;60V/Gate Charge(Qg);12.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.378nF


N-Channel 60V 23A 34.7W Surface Mount TO-252-2

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);12.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$1.65 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);12.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;34.7W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);64pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.378nF


    N-Channel 60V 23A 34.7W Surface Mount TO-252-2

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