HUASHUO-Single FETs, MOSFETs-HSU6006

Description

Drain to Source Voltage;60V/Gate Charge(Qg);19.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);97pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;2.423nF


N-Channel 60V 35A 45W Surface Mount TO-252-2

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);19.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);97pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$3.18 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);19.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);97pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;2.423nF


    N-Channel 60V 35A 45W Surface Mount TO-252-2

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