HUASHUO-Single FETs, MOSFETs-HSU6P20

Description

Drain to Source Voltage;200V/Gate Charge(Qg);82nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);810mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.155nF/Output Capacitance(Coss);49pF


P-Channel 200V 6A 38W Surface Mount TO-252

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);82nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);810mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$5.31 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);82nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;38W/RDS(on);810mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.155nF/Output Capacitance(Coss);49pF


    P-Channel 200V 6A 38W Surface Mount TO-252

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