HUASHUO-Single FETs, MOSFETs-HSU90P04

Description

Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;86W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);366pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;6.805nF/Output Capacitance(Coss);538pF


40V 5.2mΩ@10V 1 P-Channel 86W TO252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;86W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);366pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);116nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;86W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);366pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;6.805nF/Output Capacitance(Coss);538pF


    40V 5.2mΩ@10V 1 P-Channel 86W TO252 Single FETs, MOSFETs RoHS

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