HUASHUO-Single FETs, MOSFETs-HSW2N10D

Description

Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);260mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;330pF


N-Channel Array 100V 2A 0.7W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);260mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$1.65 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;700mW/RDS(on);260mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;330pF


    N-Channel Array 100V 2A 0.7W Surface Mount SOT-23-6L

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account