HUASHUO-Single FETs, MOSFETs-HSW2N15

Description

Drain to Source Voltage;150V/Gate Charge(Qg);8.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);33pF


N-Channel 150V 1.4A 1.56W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);8.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$2.85 Excl. VAT

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);8.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.56W/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);33pF


    N-Channel 150V 1.4A 1.56W Surface Mount SOT-23-6L

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