HUASHUO-Single FETs, MOSFETs-HSW3004

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6nC@4.5V;8.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;630pF;675pF/Output Capacitance(Coss);76pF;60pF


30V 28mΩ@4.5V 1 N-Channel + 1 P-Channel 1.4W SOT-23-6L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);6nC@4.5V;8.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6nC@4.5V;8.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;630pF;675pF/Output Capacitance(Coss);76pF;60pF


    30V 28mΩ@4.5V 1 N-Channel + 1 P-Channel 1.4W SOT-23-6L Single FETs, MOSFETs RoHS

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