HUASHUO-Single FETs, MOSFETs-HSW4602

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8.4nC@10V;9.8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.25W/RDS(on);24mΩ@10V;56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF;53pF/Current - Continuous Drain(Id);4.5A;3.5A/Gate Threshold Voltage (Vgs(th));1.5V;1.4V/Ciss-Input Capacitance;402pF;490pF/Output Capacitance(Coss);96pF;66pF


N-Channel+P-Channel Array 1.25W Surface Mount SOT-23-6

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8.4nC@10V;9.8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.25W/RDS(on);24mΩ@10V;56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF;53pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8.4nC@10V;9.8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.25W/RDS(on);24mΩ@10V;56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);73pF;53pF/Current - Continuous Drain(Id);4.5A;3.5A/Gate Threshold Voltage (Vgs(th));1.5V;1.4V/Ciss-Input Capacitance;402pF;490pF/Output Capacitance(Coss);96pF;66pF


    N-Channel+P-Channel Array 1.25W Surface Mount SOT-23-6

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