HUASHUO-Single FETs, MOSFETs-HSW4614C

Description

Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@10V;7.4nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;318pF;412pF/Output Capacitance(Coss);31pF;33pF


40V 36mΩ@10V 1 N-Channel + 1 P-Channel 1.4W SOT-23-6L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@10V;7.4nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current -... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);6.4nC@10V;7.4nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.4W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;318pF;412pF/Output Capacitance(Coss);31pF;33pF


    40V 36mΩ@10V 1 N-Channel + 1 P-Channel 1.4W SOT-23-6L Single FETs, MOSFETs RoHS

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