HUASHUO-Single FETs, MOSFETs-HSW6113

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.8W/RDS(on);115mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.08nF


P-Channel 60V 4.5A 1.8W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.8W/RDS(on);115mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.25 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11.8nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.8W/RDS(on);115mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.08nF


    P-Channel 60V 4.5A 1.8W Surface Mount SOT-23-6L

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