HUASHUO-Single FETs, MOSFETs-HSW6604

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.1nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.1W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;561pF/Output Capacitance(Coss);61pF


N-Channel+P-Channel Array 20V 4A 1.1W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.1nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.1W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current -... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.1nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.1W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;561pF/Output Capacitance(Coss);61pF


    N-Channel+P-Channel Array 20V 4A 1.1W Surface Mount SOT-23-6L

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