HUASHUO-Single FETs, MOSFETs-HSW6822

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);69pF


N-Channel Array 20V 5A 1.7W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.5nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);63pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);69pF


    N-Channel Array 20V 5A 1.7W Surface Mount SOT-23-6L

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