HUASHUO-Single FETs, MOSFETs-HSY0076A
- HUASHUO
Drain to Source Voltage;100V/Gate Charge(Qg);215nC@10V/Number;1 N-channel/Pd - Power Dissipation;333W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);388pF/Current - Continuous Drain(Id);320A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more
$3.84 Excl. VAT
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