HUASHUO-Single FETs, MOSFETs-HSY010N04A

Description

Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);0.85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);396A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.805nF/Output Capacitance(Coss);3.406nF


40V 0.85mΩ@10V 1 N-channel 272W TOLL-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);0.85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);396A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);140nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;272W/RDS(on);0.85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);396A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;8.805nF/Output Capacitance(Coss);3.406nF


    40V 0.85mΩ@10V 1 N-channel 272W TOLL-8 Single FETs, MOSFETs RoHS

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