HUASHUO-Single FETs, MOSFETs-HSY021N12A
- HUASHUO
Drain to Source Voltage;120V/Gate Charge(Qg);204nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;278W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input... Read more
$4.80 Excl. VAT
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