HUASHUO-Single FETs, MOSFETs-IRLML5203

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.32W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;650pF


P-Channel 30V 3.2A 1.32W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.32W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.3nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.32W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;650pF


    P-Channel 30V 3.2A 1.32W Surface Mount SOT-23

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