Huixin-Single FETs, MOSFETs-BC3400

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);35mΩ@10V;40mΩ@4.5V;52mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);47.5pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));850mV/Ciss-Input Capacitance;815pF/Output Capacitance(Coss);61pF


30V 1 N-channel 1.2W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);35mΩ@10V;40mΩ@4.5V;52mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);47.5pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));850mV/Ciss-Input Capacitance;815pF/Output Capacitance(Coss);61pF30V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.2W/RDS(on);35mΩ@10V;40mΩ@4.5V;52mΩ@2.5V/Reverse Transfer Capacitance (Crss@Vds);47.5pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));850mV/Ciss-Input Capacitance;815pF/Output Capacitance(Coss);61pF


    30V 1 N-channel 1.2W SOT-23 Single FETs, MOSFETs RoHS

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