Huixin-Single FETs, MOSFETs-H12N60E
- Huixin
Drain to Source Voltage;600V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$3.48 Excl. VAT
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